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Friday, July 31, 2020 | History

2 edition of Lateral mode frequency locking in semiconductor lasers. found in the catalog.

Lateral mode frequency locking in semiconductor lasers.

Reuven Gordon

Lateral mode frequency locking in semiconductor lasers.

by Reuven Gordon

  • 43 Want to read
  • 10 Currently reading

Published by National Library of Canada in Ottawa .
Written in English


Edition Notes

Thesis (M.Sc.) -- University of Toronto, 1999.

SeriesCanadian theses = -- Thèses canadiennes
The Physical Object
Pagination2 microfiches : negative. --
ID Numbers
Open LibraryOL19263328M
ISBN 100612454258

the required degree of frequency stability at a offset of 9 GHz. A simpler solution is to stabilize the lasers in a heterodyne phase-locked loop. Laser diodes, which have good frequency stability characteristics and can be modulated with a large bandwidth, are ideal for optical phase-locking . Previously, single-frequency semiconductor laser operation using fiber Bragg gratings has been achieved by two methods: 11 use of the FBG as the output coupler for an anti-reflection-coated semiconductor gain element ; 2) pulsed operation of a gain-switched Fabry-Perot laser diode with FBG-optical and RF-electrical feedback 2.

Encyclopedia > letter S > single-frequency operation. Single-frequency Operation. Ask RP Photonics for advice on how to ensure single-frequency operation of a laser, or how to characterize single-frequency lasers in terms of noise.. Definition: an operation mode of a laser where only a single resonator mode acquires a significant power. Opposite term: multimode . back-reflections, quickly destroying the coherence of the mode-locking. Here, we investigate the stabilization of mode-locked lasers directly edge coupled to a silicon photonic integrated circuit, with the objective of moving isolators downstream to the output of the photonic circuit. A kHz 3 dB RF linewidth, substantially.

The semiconductor disk laser, a relatively novel type of light oscillators, is now under intensive development. These lasers produce an excellent beam quality in conjunction with a scalable output power. This paper presents recent achievements in power scalability, mode-locking and frequency conversion with optically-pumped semiconductor disk. the carrier to noise level at offset frequencies from the first 3 harmonics of the 5 GHz mode- locking frequency. The absolute ms timing jitter was calculated [ l] from Figure 3 as fs over the Hz to 50 MHz offset frequency range. The mode-locked laser makes significant contributions to the total jitter beyond lo0 kHz offsets from the.


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Lateral mode frequency locking in semiconductor lasers by Reuven Gordon Download PDF EPUB FB2

Mode locking of lateral modes in broad-area semiconductor lasers by subharmonic optical pulse injection Joachim Kaiser,a Ingo Fischer,b and Wolfgang Elsässer Institute of Applied Physics, Darmstadt University of Technology, Schlossgartenstrasse 7, Darmstadt,Cited by: 2.

Abstract: Lateral-mode frequency locking in the high-power operation of narrow-ridge semiconductor lasers is shown to be attributable to carrier-induced third-order nonlinearities. Not only are known experimental characteristics of beam steering explained with this theory, but new insights into the nature of beam steering, such as its inherent bistable behavior, are Cited by: 8.

Frequency-modulation mode locking of a semiconductor laser. Lasers (University Science Books, Mill Valley, Calif., ). mode locking of a semiconductor laser has been demonstrated.

Abstract: The chapter reviews the physical foundations, the theoretical analysis, the experimental implementation, and possible applications of the three main regimes of ultrafast pulse generation by semiconductor lasers (SLs): gain-switching, passive Q-switching (QS) or self-sustained pulsation (SSP), and mode-locking.

We report FM mode locking in an extended-cavity semiconductor laser containing a tunable distributed Bragg reflector gain medium operating near μm.

We demonstrate the generation of pulses with ps duration at a repetition rate of GHz. Formulation. Our basic model is a two-element laser array which consists of two laterally-coupled semiconductor Lateral mode frequency locking in semiconductor lasers. book, i.e., two identical laser waveguides, A and B, each of width 2a, with an.

Abstract: Direct frequency modulation characteristics in three different AlGaAs lasers-a channeled-substrate planar (CSP) laser, a buried-heterostructure (BH) laser, and a transverse-junction-stripe (TJS) laserare studied theoretically and experimentally.

Experimental FM responses are measured by using the Fabry-Perot interferometer and birefringent optical filters. Abstract-The locking bandwidth of an actively mode-locked semiconductor laser is a measure of its tolerance to variations in the input drive frequency. At frequencies outside the locking bandwidth, the output pulses from the laser exhibit large am- plitude fluctuations and timing jitter.

This paper investigates. The properties of low-frequency fluctuations in semiconductor lasers with optical feedback from a long external cavity are experimentally studied. Frequency-locking of the laser light output to the injection current modulation is observed when the modulation frequency approaches the external cavity mode.

The modulation frequency for the successful frequency-locking is. The Wavelength References Clarity Laser family locks laser emissions to molecular absorption lines. The instrument drives a semiconductor laser in a unique configuration that creates superb frequency stability traceable to a physical constant and thus forms a primary frequency.

We generate stable mode-locking of different lateral modes in broad-area semiconductor lasers (BALs) by local injection of short optical pulses repeated at subharmonics of the lateral mode separation. The locking results in a persistent, periodic spatiotemporal dynamics consisting of a laterally alternating intensity modulation with a repetition rate of GHz, which.

The RP Photonics Buyer's Guide contains 56 suppliers for single-frequency lasers. Among them: TOPTICA Photonics. All of TOPTICA’s tunable diode lasers offer a narrow linewidth of typically kHz, corresponding to coherence lengths of almost 1 km.

By stabilizing these lasers even further with TOPTICA’s locking electronics, linewidths below 1 Hz are possible. Almost 60 years have passed since the first demonstration of a laser in After the initial spark of interest, lasers were for a while categorized as “a solution waiting for a problem,” but bit by bit, the range of their applications has expanded to encompass fields as diverse as DNA sequencing, consumer electronics manufacturing, or freezing the motion of electrons around atoms.

Continuous Detuning of Laser Frequency In many experiments with atomic spectroscopy, one needs to detune the frequency of the diode laser away from its locked value.

In what follows, we describe the mechanism employed in our design to achieve laser frequency detuning. Because of the presence of the lock-in circuit, the laser frequency is.

Mode-locking is a technique in optics by which a laser can be made to produce pulses of light of extremely short duration, on the order of picoseconds (10 −12 s) or femtoseconds (10 −15 s). A laser operated in this way is sometimes referred to as a femtosecond laser, for example in modern refractive basis of the technique is to induce a fixed-phase relationship.

For a semiconductor laser the refractive index depends on the carrier density and α determines this dependence. Although zero dependence is impossible to obtain in practice, in our simulation α is varied from 0 to 5.

Table 2 shows the variation in pulsewidth, spectral width and TBP due to α at the fundamental mode-locking frequency of GHz. excellent beam quality, with commercially available fiber lasers producing kilowatt single-mode output powers and wall-plug efficiencies of ~30% [1].

However, fiber lasers require optically pumping with high power semiconductor diode lasers, fundamentally limiting the. The two processes of gain switching and mode-locking in a semiconductor laser are studied within a single theoretical framework. It is shown that the pulse profiles generated for each process are governed by essentially the same equations, and that the difference between the two cases lies merely in the value of a timescale.

Here we show that, despite this notion, semiconductor ring lasers with ultrafast gain recovery9,10 can enter frequency comb regimes at low pumping levels owing to phase turbulence11—an. Mode-locked semiconductor lasers offer efficient light modulation at frequencies nearly equal to one over the round trip time in the mode-locked laser cavity.

High frequency fiber-optic systems using mode-locked semiconductor lasers are useful for signal distribution and antenna remoting where metal waveguides are replaced by fiber optics. A laser with a single well-defined frequency (corresponding to a given value of q) is a “single-longitudinal- mode laser”: only one longitudinal mode could oscillate, and the laser consequently exhibits a high spectral purity (and then an important coherence length).measurement of small laser frequency shifts with only a few mA variation of injection current.

Current control is a common way to quickly adjust the frequency of a diode laser, over a range where the laser does not “mode-hop”. Give the value for the measured “actuator coefficient” in units of [MHz/mA]. 8.A laser diode, (LD), injection laser diode (ILD), or diode laser is a semiconductor device similar to a light-emitting diode in which a diode pumped directly with electrical current can create lasing conditions at the diode's junction.: 3 Laser diodes can directly convert electrical energy into light.

Driven by voltage, the doped p-n-transition allows for recombination of an electron with a hole.